Deposition was carried out at a working pressure of 0.2 Pa after presputtering with Ar for 10 min. When the chamber pressure was stabilized, the DC generator was set to 60 W. The deposition rate utilized was 18 nm/min. The 2-in. quartz master mold with 250-nm-wide and 150-nm-long lines separated by 550-nm
space was fabricated by laser interference lithography and RIE. Prior to replication of soft PDMS mold, the quartz master self-assembled an anti-adhesive monolayer (1H,1H,2H,2H-perfluorodecyltrichloro-silane (FDTS)) by vapor phase deposition to yield a low surface free energy, which is required to detach easily the quartz master and soft PDMS. Figure 2 shows the schematic illustration of the soft PDMS mold based on the quartz master Akt inhibitor mold. In this paper, we designed a scheme of replication based on the quartz master mold: PDMS was diluted with toluene (60 wt.%) to decrease the viscosity, since the modification of the PDMS ensures high fidelity of pattern features by UV-NIL . The degassed modified PDMS was spin-coated at 3,000 rpm for 30 s on the
quartz master mold. After degassing, the quartz master mold with a selleck uniform layer was cured at 120°C for 15 min. Then the degassed PDMS prepolymer (Sylgard 184, Dow Corning, Midland, MI, USA) and its curing agent (1:10 weight) were carefully poured onto the surface, followed by curing at 100°C for 30 min. Afterwards, the 2-in. soft mold, the modified PDMS supported by thick, flexible PDMS layer, was peeled off from the quartz master mold. Figure 2 Schematic illustration
of soft PDMS mold based on quartz master mold. After the deposition of PDGFR inhibitor Al thin films, the 220-nm-thick UV-curable resin AMONIL-MMS4 (AMO GmbH, Aachen, Germany) was spin-coated at a speed of 3,000 rpm for 30 s onto 150-nm-thick Al thin films. At 100°C, the AMONIL-MMS4 was prebaked on a hot plate. The UV-NIL was performed on an EVG620 (EVG Group, Schärding, Austria). The nanoimprint pressure is 3 × 104 Pa, and the hold time of UV exposure is 90 s. The residual polymer layer was then removed by RIE (CRIE-100, AST, Hsinchu County, Taiwan). The O2 gas flow rate, working pressure, radio-frequency (RF) power, DC bias voltage, and etch time were maintained at 200 sccm, 13 Pa, 50 W, −200 V, and 120 s, respectively. The patterns were subsequently transferred into Al thin films by RIE. The BCl3 and Cl2 gas flow rates, working pressure, RF power, DC this website bias voltage, and etch time were maintained at 100 and 25 sccm, 1 Pa, 600 W, −200 V, and 90 s, respectively. The nanopatterned Al thin films were subsequently subjected to dual-stage annealing. Our experimental results reveal that the hillock formation on Al thin films was minimized with an oxidation anneal at 450°C . Therefore, the first comprised an oxidation anneal, where the annealing temperature was 450°C for 24 h. The temperature ramp rate was 10°C/min. This was followed by a high-temperature annealing in the range of 1,000°C to 1,200°C for 1 h.