Results and discussion Conductive atomic force microscopy (c-AFM) has been used to investigate conductivity, as seen in Figure 3. Changing the matrix from SiO2 to SiC greatly increases current (I) and decreases threshold voltage (V), according to comparisons

of the 2D arrays of Si-NDs. Although a primary factor should be macro-conductivity differences between SiC and SiO2, one cause is minibands that enhance conductivity, which was revealed in a later theoretical simulation. More significantly, conductivity became higher as the arrangement was changed from a single Si-ND to 2D and 3D arrays with the same matrix of SiC, i.e., the coupling of wave functions was changed. Note that conductivity in the 3D array was higher than that in the 2D array, even though the total thickness of the QDSL expanded. These results indicate that the formation of minibands both in-plane and out-of-plane (vertically) PCI32765 might enhance carrier conductivity in QDSLs. Figure 3 I – V curves of single Si-ND, 2D, and 3D arrays of Si-NDs measured by c-AFM. Red, blue, and green lines plot results for the 3D array, 2D array,

and single Si-ND with SiC matrix. Black line plots the results for 2D array Si-NDs with SiO2 matrix. We considered resonant tunneling to be a theoretical mechanism that could explain our experimental results on the basis of these results. Therefore, we theoretically investigated enhanced conductivity due to the formation of minibands. Our developed top-down AS1842856 research buy nanotechnology Foretinib cost achieved great flexibility in designing parts for the quantum structure, such as the independently controllable diameter and thickness, high aspect ratio, and different matrix materials. The finite element method duly described the complex quantum structures. The electronic structure and wave function within envelope function theory are presented as. (1) Here we mainly took into consideration

the matrix material, realistic geometry structure, and number of stacking this website layers. The results are presented in Figure 4. A distinct feature is that electron wave functions are more strongly confined in the Si-NDs in the SiO2 matrix due to the higher band offset of the Si/SiO2 interface. Thus, they resulted in higher quantum levels. In addition, stronger confinement means weaker coupling of the wave function and narrower minibands in the same geometry alignment. By stacking our NDs from one layer to ten layers, the miniband in Figure 5 gradually broadens, and at around four to six layers, the miniband width seems to saturate. The probability of the wave function diffusing into the barrier exponentially reduces with distance, which indicates that wave function coupling exponentially saturates as the number of layers increases. Perhaps four- or six-layer NDs are sufficient to maximize the advantage of minibands. Figure 4 Calculated results for electron spatial possibilities. In three lateral coupled NDs and miniband width in 2D array of Si-NDs.